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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor A106

Catalog Datasheet MFG & Type PDF Document Tags

diode A106

Abstract: a106 diode transistor, unless otherwise noted. XTR105P, U PA RA M ETER CONDITIONS OUTPUT Output Current , or greater for the maximum loop current of 20mA: r, _ R L m aX - EXTERNAL TRANSISTOR Transistor Q! conducts the majority of the signal-dependent 4-20mA loop current. Using an external transistor isolates the majority of the power dissipation from the precision input and reference circuitry of the XTR105, maintaining excellent accuracy. Since the external transistor is inside a feedback
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diode A106 a106 diode transistor A106 14-PIN SO-14 0033M 1N4753A 1N6286A 17313LS

transistor A106

Abstract: Coefficient of Output Voltage VIN â'" â'" 10 âVOUT(A)â'¢106 â'" ±100 â'" â , (A)â'¢106 â'" ±100 â'" â'" 0.5 â'" V ppm/°C I OUT = 40 mA, -40° ≤ TA â , Temperature Coefficient of Output Voltage VIN â'" â'" 10 âVOUT(A)â'¢106 â'" ±100 â , (A)â'¢106 â'" ±100 â'" â'" 0.5 â'" V ppm/°C I OUT = 40 mA, -40° ≤ TA â , Temperature Coefficient of Output Voltage VIN â'" â'" 10 âVOUT(A)â'¢106 â'" ±100 â
Microchip Technology
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DS21435F-

d 1047 transistor

Abstract: BLY92A transistor N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is resistance , transistor bly92a CHARACTERISTICS Tj = 26 °C unless otherwise specified Collector cut-off current IB = 0 , transistor APPLICATION INFORMATION R.F. performance in c,w. operation (unneutralized common-emitter class-B , board for 175 MHz test circuit. â'"106 mm- 'Si 55mm 7Z67868 The circuit and the components are
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d 1047 transistor BLY92A yl 1042 transistor t33d ferroxcube wideband hf choke philips Trimmer 60 pf 8-32UNC 53T31
Abstract: PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 20 November 2009 Product , (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN , ‰¤ 0.02. [1] Unit - â'30 V - â'5.3 A - collector current Max - â'10.6 , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 , (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute NXP Semiconductors
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PBSS303NZ

2SK736

Abstract: R427525 NEC ELECTRONICS INC 98D 18908 D E C ELECTRONICS INC 1 a d e I m g 7 s g 5 â¡ â¡ 1 a â i o a a . . â'"^awjgggy N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK736 DESCRIPTION The 2SK736 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES â'¢ Gate Drive - Logic level - â'¢ LowRDS(on) â'¢ No Secondary Breakdown ABSOLUTE MAXIMUM , 0.15 s a,°
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I0A13 T-39-11 4275E5

HA13412

Abstract: 13412 detector â'¢ Protection circuit disables the output transistor if the Hall amplifier input is cut â , switching frequency (fc) is defined by the following equation. rNF r108 «-1 «106 Timing Chart â'¢ Hall
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HA13412 SP-23TA 13412 power amplifier TRANSISTOR Hitachi Scans-001 Hall amplifier transistor b104

B5G1

Abstract: BSS138 National Semiconductor" May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are , Characteristics (continued) S 1.12 tu «S" j 9 1.06 i ¡1.06 : 1.04 0 ce. 3 s 1.02 1 o S i o ¿ 0.98 Ã
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B5G1

CD4538BCN

Abstract: 74LS is recognized, which turns on comparator C1 and N-Channel transistor Nl'1'. At the same time the output latch is set. With transistor N1 on, the capacitor Cx rapidly discharges toward Vss until VREF1 is reached. At this point the output of comparator C1 changes state and transistor N1 turns off. Comparator C1 then turns off while at the same time comparator C2 turns on. With transistor N1 off, the , sets the reset latch and causes the capacitor to be fast charged to VDo by turning on transistor Ql
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CD4538BC CD4528BC CD4538BCN 74LS CD4538BCM CD4538BCWM MS-001
Abstract: â'105 dBc 100 kHz â'106 dBc 1 MHz â'120 dBc 10 MHz â'145 dBc Operating Range 3.3 V $5% , in Transistor Count 6000 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1 , Offset from Carrier @ 1 MHz Offset from Carrier @ 10 MHz Offset from Carrier â'80 â'88 â'105 â'106 ON Semiconductor
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NB3N508S NB3N508S/D
Abstract: PBSS301PX 12 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 17 November 2009 Product , (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic , - collector current Max - â'10.6 A - 28 40 mΩ PBSS301PX NXP Semiconductors 12 V, 5.3 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning , Semiconductors 12 V, 5.3 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values NXP Semiconductors
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PBSS301NX

TRANSISTOR A107

Abstract: transistor A143 Transistor MRF6522-5R1 Nâ'"Channel Enhancementâ'"Mode Lateral MOSFET Designed for Class A and Class AB , '"15 0.730 â'"106 0.825 0.826 â'"138 4.08 63 0.043 â'"16 0.731 â'"107 0.850 , â'"139 5.78 69 0.037 â'"10 0.635 â'"106 0.775 0.805 â'"141 5.59 67 , '"8 0.625 â'"104 0.775 0.808 â'"143 5.58 66 0.034 â'"10 0.628 â'"106 0.800
Motorola
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TRANSISTOR A107 transistor A143 TRANSISTOR A117 Transistor A119 A124 transistor transistor a124 MRF6522
Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"23.35 â'"27.74 â'"34.42 â'"39.17 â'"43.09 S 22 Ang Mag Ang â'"10.6 â'"24.3 â'"39.8 â Teledyne Cougar
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MIL-HDBK-217E
Abstract: Frequency, MHz Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature , '"110.74 â'"129.23 â'".77 â'".92 â'"1.06 â'"1.16 â'"1.02 â'".54 â'".04 .63 1.05 1.34 1.86 2.08 Agilent Technologies
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1000MH 5963-2457E
Abstract: : Transistor Chip Useâ' for additional information. 2 INA-03100 Absolute Maximum Ratings Thermal , 19.1 â'"4 â'"8 â'"15 â'"29 â'"42 â'"53 â'"63 â'"72 â'"81 â'"88 â'"97 â'"106 â'"132 â Agilent Technologies
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AB-0007 5965-9676E 5980-1188E
Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , '"22.27 â'"22.16 â'"23.35 â'"27.74 â'"34.42 â'"39.17 â'"43.09 S22 Ang Mag Ang â'"10.6 â Agilent Technologies
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500MH 5963-2554E
Abstract: zero-cross detector â'¢ Protection circuit disables the output transistor if the Hall amplifier input is , frequency (fc) is defined by the following equation. rnf r 108 «.1 «106 Timing Chart â -
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P-23TA

A773* Transistor

Abstract: A773 Transistor DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES â'¢ Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz 2.1±0.1 |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.25±0.1 â'¢ A Super Mini Mold Package , '"7.5 â'"10.6 â'"14.9 â'"17.9 â'"22.1 â'"25.8 â'"29.1 â'"33.3 â'"35.8 â'"40.3 â'"43.4 â'"46.8 â
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A773* Transistor A773 Transistor PA807T-T1 2SC5179

A1527 transistor

Abstract: transistor A1527 +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , Mag Ang â'"10.6 â'"20.6 â'"30.0 â'"41.7 â'"52.8 â'"65.4 â'"80.1 â'"96.4 â'"111.4 â
Teledyne Cougar
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A1527 transistor transistor A1527 A1231 transistor A6753

transistor A798

Abstract: a1274 transistor PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 â'¢ High fT 1.25±0.1 fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.2 â'"0 6 4 5 1 2 3 â'¢ Built-in 2 Transistors (2 à , 0.331 0.317 0.303 0.287 0.270 0.253 0.238 0.223 0.213 â'"10.6 â'"18.1 â'"25.1 â'"27.9 â
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transistor A798 a1274 transistor A1137 A798 transistor PA813T-T1

A1271 transistor

Abstract: +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"129.23 â'".77 â'".92 â'"1.06 â'"1.16 â'"1.02 â'".54 â'".04 .63 1.05 1.34 1.86 2.08 2.20 1.92
Teledyne Cougar
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A1271 transistor
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