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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4357HMS8#PBF Linear Technology LTC4357 - Positive High Voltage Ideal Diode Controller; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4352CMS#PBF Linear Technology LTC4352 - Low Voltage Ideal Diode Controller with Monitoring; Package: MSOP; Pins: 12; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

pin diode do34

Catalog Datasheet MFG & Type PDF Document Tags

rd5.6b

Abstract: zener rd9.1esb2 RD12FM RD13FM RD15FM 2-pin power mini-mold CD-ROM X13769XJ2V0CD00 09-2 Diode Zener Diode s , -59) Single Twin 5-pin mini-mold (SC-74A quarto) CD-ROM X13769XJ2V0CD00 09-6 Diode Noise , CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode s Zener Diode Quick , RD13UM RD15UJ RD15UM 2-pin ultra mini-mold General Low noise Purpose RD2.0M RD2.2M RD2.4M RD2.7M RD3 , .5S RD8.2S RD9.1S RD10S RD11S RD12S RD13S RD15S 2-pin super General Purpose RD4.7SL RD5.1SL RD5.6SL RD6
NEC
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RD11UM rd5.6b zener rd9.1esb2 rd6.8a rd3 zener RD2.4E RD51P RD10UJ RD10UM RD11UJ RD12UJ RD12UM

1N4148 SMD LL-34

Abstract: Diode smd 82T -40) DO-35 (SC-40) DO-35 (SC-40) DO-35 (SC-40) DO-35 (SC-40) DO-34 DO-34 DO-34 DO-34 DO-34 USD USD USD , -34 DO-35 (SC-40) DO-35 (SC-40) DO-35 (SC-40) DO-34 DO-34 DO-34 48 48 48 51 51 51 54 54 54 6 , -34 LL-34 LL-34 DO-35 (SC-40) DO-35 (SC-40) DO-35 (SC-40) DO-34 DO-34 DO-34 57 57 57 60 60 60 63 63 63 , -40) DO-34 DO-34 DO-34 DO-34 DO-35 (SC-40) 66 68 68 68 71 71 71 74 76 Package Page RLS245 1SS142 1SS143 , 20 75 50 50 30 50 25 20 75 20 75 20 75 20 LL-34 75 30 50 50 70 20 75 50 30 50 25 DO-34 DO-34 DO-34 DO-34
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1N4148 SMD LL-34 Diode smd 82T LTZ-MR15 SMD 82T da226u 1N4606 1SS353 1SS354 1SS355 RLS-71 RLS-72 RLS-73

BAT85

Abstract: BAT85 equivalent Product specification Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting , Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. · Blocking , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode
Philips Semiconductors
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BAT85 equivalent MAM193 MSA212

BAT85

Abstract: · Voltage clamping MAM193 · Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode , Mar 20 Philips Semiconductors Product specification Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34
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Abstract: SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. â , outline (SOD68; DO-34), pin configuration and symbol. â'¢ Blocking diodes. LIMITING VALUES In , Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES DESCRIPTION â'¢ Low forward voltage â'¢ Guard ring protected Planar Schottky barrier diode with an , Schottky barrier diode BAT85 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified -
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Abstract: ; DO-34), pin configuration and symbol. â'¢ Blocking diodes. LIMITING VALUES In accordance with , Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES , etically-sealed leaded glass package. Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a herm etically-sealed subm iniature SOD68 (DO-34) package. The diode is suitable fo r m ounting on a 2 E (5.08 mm) pitch. a APPLICATIONS (o) i â'¢ Ultra -
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MR4540

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 English Printing Document Name PIN Hitachi Diode Hitachi PIN Diode Publication Date , -214 ) MATSUSHITA DO-41 DO-35 DO-34 TO-220F TO-220D Leadless Mini 3P Mini 5P S Mini 3P S Mini 4P Mini 2P S Mini 2P SS Mini 2P New Mini Power 2P TO-220(c) NEC DO-41 DO-35 DO-34 MP-45F MP , -41SS DO-35 DO-34 TO-220FL TO-220AB Leadless S-MINI(SC-59) SMV USM LLDS(LL-34) SSD3/SMD3 SMD5 UMD3 UMD4 SONY PHILIPS SIEMENS DO-35 DO-34 SC-46 TO-220AB SOT-23/SC-59A TO
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MA151WK 1SS211 ISS376 DA323K IPS302 diode cross reference 1s1555 diode cross reference 1s2473 1S2473 DIODE equivalent 1S2473 DIODE 1S1555 1S1588 1SS104 1S1553 1S1554 1S953

BAT85

Abstract: pin diode do34 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. â'¢ Hermetically-sealed , 134). [(o); i T ^ ^ - ^ -M- Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol , Philips Semiconductors Product specification Schottky barrier diode BAT85 FEATURES DESCRIPTION â'¢ Low forward voltage Planar Schottky barrier diode with an integrated protection ring against , Semiconductors Product specification Schottky barrier diode BAT85 ELECTRICAL CHARACTERISTICS Tamb = 25 °C
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pin diode do34 philips Schottky diode BAT85 SOD68 S0068 7110A2

zener diode RD2.2S

Abstract: RD2.0HS RD20FM RD22FM RD24FM RD27FM RD30FM RD33FM RD36FM RD39FM RD43FM RD47FM RD51FM 2-pin mini-mold Power minimold (SC·62) 2-pin power mini-mold 185 Diode Zener Diode s Zener Diode , Diode Zener Diode s Zener Diode Quick Reference (1/2) Vz (V) P (W) TYP. 2.0 2.2 2.4 , RD24UM RD27UM RD30UM RD33UM RD36UM RD39UM 2-pin ultra mini-mold Low noise General Purpose , .0HS RD3.3HS RD3.6HS RD3.9HS RD4.3HS RD4.7HS DO-34 0.4 RD4.7JS RD5.1JS RD5.6JS RD6.2JS RD6
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RD16MW zener diode RD2.2S RD2.0HS rd2.2m nec 10f str 450 a RD13UJ RD16UJ RD18UJ RD20UJ RD22UJ RD24UJ

BAT81

Abstract: BAT82 Absolute Maximum Rating System (IEC 134). DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. (CM) I-IC j\ |] ic=i â'"J4- Fig. I Simplified outline (SOD68; DO-34), pin configuration and symbol. SYMBOL PARAMETER CONDITIONS MIN , '¢ Hermetically-sealed leaded glass package â'¢ Low diode capacitance. APPLICATIONS â'¢ Ultra high-speed switching â
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BAT81 BAT82 BAT83 01D131S

pin diode do34

Abstract: BAT82 subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. · High breakdown voltage · Guard ring protected · Hermetically-sealed leaded glass package · Low diode , clamping · Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol , BAT81; BAT82; BAT83 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode , IF = 15 mA 1 V IR reverse current VR = VRmax; see Fig.3 200 nA Cd diode
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bat83 is

BAT81

Abstract: BAT82 Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. · Blocking diodes , DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. · High breakdown voltage · Guard ring protected · Hermetically-sealed leaded glass package · Low diode capacitance. k handbook, halfpage
Philips Semiconductors
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Abstract: SO D 68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. â'¢ High breakdown voltage â'¢ Guard ring protected â'¢ Herm etically-sealed leaded glass package â'¢ Low diode , switching â'¢ Voltage clam ping â'¢ Protection circuits Fig.1 Sim plified outline (SOD68; DO-34), pin , FE A T U R E S D ESC RIPTIO N â'¢ Low forward voltage Planar Schottky barrier diode with an , Rmax; see Fig.3 Cd diode capacitance f = 1 MHz; V R = 1 V; see Fig.4 1 V 200 nA -
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smd diode 74a

Abstract: PD7201 E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for , ) Application: Cellular, Car equipment, Power Supply, TV/AV etc. 1 diode 2 diodes 4 diodes NNCD*C NNCD*D NNCD*E NNCD*F NNCD*G SC-78 SC-76 SC-59 SC-59 SC-74A DO-34 and DO , diode behaves as a capacitance except when it absorbs ESD. Capacitance increases rise time. The small
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IEC1000-4-2 smd diode 74a PD7201 smd lg diode uPD72011 smd diode 6D SC-88A 07210-902-G D11663EJ4V0PF00

BAT85

Abstract: specification Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch , .1 Simplified outline (SOD68; DO-34), pin configuration and symbol. · Blocking diodes. LIMITING VALUES In , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode
Philips Semiconductors
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MAM193

Abstract: G1.L sheet Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch , .1 Simplified outline (SOD68; DO-34), pin configuration and symbol. · Blocking diodes. LIMITING VALUES In , DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 BAT85 Schottky barrier diode
NXP Semiconductors
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G1.L

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A Diode Dual Single Dual Single Dual Complementary Configuration µPA2211 P , ,-E2 -T1, -T2 -E1, -E2 -T1, -T2 Taping Type (2429) 8-pin VSOF 8-pin VSOF (1629) 8-pin HVSOF (3333) 5-pin MM 6-pin TMM 5-pin SSP 6-pin MM 6-pin WSOF 6-pin SSP , µPA2780GR µPA2781GR 11 MOSFET Schottky Diode µPA2782GR N 5 6 10 7 5.5 5 , Low-Voltage Power MOSFETs SOP-8 SOP-8 8-pin HVSON (6051) 8-pin HVSON (6051) SOP-8 SOP
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smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin G18756EU3V0SG00

BAT85

Abstract: specification Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch , .1 Simplified outline (SOD68; DO-34), pin configuration and symbol. · Blocking diodes. LIMITING VALUES In , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode
Philips Semiconductors
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DIODE BAT86 replacement

Abstract: bat86 BAT86 25 July 2012 Schottky barrier single diode Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable , Min Typ Max 200 Unit mA 2. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K A cathode[1] anode [1] Simplified outline k a Graphic symbol K A aaa-003679 DO-34
NXP Semiconductors
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DIODE BAT86 replacement

XB15A105

Abstract: pin diode do34 PIN DIODE NLong Carrier Lifetime Applications NSmall Diode Capacitance (0.36pF at VR , Surge-proof NSmall Glass Package Dimensions MAX 2.6 The XB15A105 PIN diode employs a high reliability , General Description MIN 26 MIN 26 JEDEC DO-34 Absolute Maximum Ratings SYMBOL Ta=25 OC , 1.0V Ct Diode Capacitance V R = 0V, f = 100MHz 0.36 0.5 pF I F = 10mA, f = 50MHz , .E-04 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.E-10 0.1 1.2 10 1 DIODE
Torex Semiconductor
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100MH
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