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DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode A106

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diode A106

Abstract: a106 diode low as practical. Various zener diode and surge clamping diodes are specially designed for this purpose. Select a clamp diode with as low a voltage rating as possible for best protection. For example, a 36V protection diode w ill assure proper transmitter operation at normal loop voltages, yet w , protection methods without compro­ mising operating range. Figure 4 shows a diode bridge circuit which , diode drop (approximately 1.4V) loss in loop supply volt­ age. This results in a compliance voltage o
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diode A106

Abstract: a106 diode 6427525 NEC ELECTRONICS INC C ELECTRONICS INC Tfi _98D 18268 D T^ Â¥ DE|b427S25 GDlflShfl 1 (^t NEC ELECTRON DEVICE PRELIMINARY SPECI Fl CATIOIV LIGHT EMITTING DIODE SÉ313 GaAs INFRARED EMITTING DIODE -NEPOC SERIES- DESCRIPTION The SF313 is a GaAs (Gallium Arsenide) Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm. PACKAGE DIMENSIONS in millimeters a â'"1-0.6 FEATURES â
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diode A106 a106 diode Diode Optical Smoke DEtector SE313 427S25
Abstract: '"4.6 5.3 UN IGBT FWDi 36.0 36.0 â'"0.7 â'"10.6 VN IGBT FWDi 51.0 51.0 â'"0.7 â'"10.6 WN IGBT FWDi 76.0 76.0 â'"0.7 â'"10.6 Bottom view Y X P N U V W ELECTRICAL , DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT â'"IC (A) COLLECTOR CURRENT IC , 7 MITSUBISHI PM100CS1D120 DIODE REVERSE RECOVERY -
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a106 diode

Abstract: diode A106 CRO DESCRIPTION MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOpts, Duty Ratio = 0.01. MI51T INFRARED EMITTING DIODE , / VÌI 0.5(0.02) 4 05.4(0.232) I - 1.0(0.04) I 0.62(0.024) 1.3(0.05) â'"1.06(0.04) 19.0(0.75) .
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Abstract: Amphenol "Transient Protection Diode Connectors â'¢ Clamping voltage as low as 11.9 volts â , existing proven diode technology â'¢ Protection for 5.8 to 200 VDC circuits â'¢ No additional , to applicable requirements of MIL-S-19500TX/ TXV â'¢ Available as repairable or fixed diode , The Amphenol® Diode Connector offers the versatility of a standard connector, with transient protection for sensitive cir­ cuits, such as TTL Lines. Diode Connector and Adapter Transients in -
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a106 diode

Abstract: diode A106 ESAC25(C,1M,D)(ioa) FAST RECOVERY DIODE IWfl: I Features yiNBttfclMifEi&'il* High voltage by mesa design ftfltfttt High reliability : Applications High speed power switching. IftM^tfe Outline'Drawings / â'"i:n (D , 0.1A, IH«0.1A 0.4 à s m ffi lit Thermal Resistance Rth(j-c) junction to case 3.0 *C/W A-106
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ESAC25-ODC ESAC25D A-106 T0-220AB SC-46 ESAC25-DDN ESAC25-DDD
Abstract: Cables Transient Protection Diode Connectors Features & Benefits: â'¢ â'¢ â'¢ â'¢ â'¢ â , high frequency applications Unipolar or bipolar â'" using existing proven diode technology Protection , box â'¢ Minimizes fast transient voltage overshoot The Amphenol® Diode Connector offers the , . c Diode Diode Connector and Adapter Transients in electrical circuits caused by a sudden , series with fil­ers. t Internal housing of the diode offers weight and space sav­ngs i over other Amphenol
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MIL-S-19500TX/TXV

a106 diode

Abstract: diode A106 ESAC25(C,1M,D)(ioa) FAST RECOVERY DIODE IWfl: I Features yiNBttfclMifEi&'il* High voltage by mesa design ftfltfttt High reliability : Applications High speed power switching. IftM^tfe Outline'Drawings / â'"i:n (D , 0.1A, IH«0.1A 0.4 à s m ffi lit Thermal Resistance Rth(j-c) junction to case 3.0 *C/W A-106
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X-1-80 A106

B5G1

Abstract: BSS138 V, lD = 0.29 A VGS = 10V,RCEN =50fi 12 16 22 ns ns ns ns DRAIN-SOURCE DIODE CHARACTERISTICS , 0.88 Drain-Source Diode Forward Voltage VGS = 0V, ls=0.44A 0.8 1.4 Note: 1. Pulse Test: Pu Ise , Characteristics (continued) S 1.12 tu «S" j 9 1.06 i ¡1.06 : 1.04 0 ce. 3 s 1.02 1 o S i o ¿ 0.98 à , 0.2 0.4 0.6 0.8 1 1 v sd , bow diode forward voltage (v) Figure 8. Body Diode Forward Voltage
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BSS138 B5G1

a106 diode

Abstract: diode A106 Temperature Ta (°C) Fig.2 Diode Power Dissipation vs. Ambient Temperature 3 100 E. o 0. 80 c o 70 (5 a. 60 , CORPORATION A106 http://www.cosmo-ic.com
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KTLP161J E169586 EN60747-5-2 2500V

HA13412

Abstract: 13412 '" Flywheel diode Notes: 1. Bias the Hall amplifiers so that the output voltage exceeds 50 mVpp. 2. Not , switching frequency (fc) is defined by the following equation. rNF r108 «-1 «106 Timing Chart â'¢ Hall
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HA13412 SP-23TA 13412 power amplifier TRANSISTOR Hitachi Scans-001 Hall amplifier transistor b104

2SK736

Abstract: FORWARD TRANSFER ADMITTANCE V«. DRAIN CURRENT , 0.15 s a,°
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2SK736 R427525 I0A13 T-39-11 4275E5
Abstract: Real time clock module Built-in Temperature Sensor SERIAL-INTERFACE REAL TIME CLOCK MODULE RTC - 4701 JE / NB Product Number (please contact us) : Q41470171000200 RTC - 4701 JE : Q41470191000200 RTC - 4701 NB â'¢Built-in 32.768 kHz quartz oscillator : Frequency adjusted for high accuracy. (5±23 ×10-6) â'¢Interface Type : Serial interface in 3 lines form. â'¢Operating voltage , â'¢ Built-in temperature sensor Control Line â'¢ Diode temperature sensor (analog voltage Seiko Epson
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RTC-4701JE RTC-4701NB

a106 diode

Abstract: ESAC25 ESAC25(C,N, D)(ioa) K FAST RECOVERY DIODE : Features High voltage by mesa design fcftlfitt High reliability Ifflii : Applications High speed power switching. Ift-ffê'+fè : Outline'Drawings 5.08 JEDEC El A J TO-220AB SC-46 mmm Connection Diagram ESAC25-ODC (D. ⺠T®|< o® ESAC25-GDN ESAC25-DDD W T®»l .(3> â SfèfcfètÉ * Maximum Ratings and Characteristics â'¢Iftitftrfcféfà , ) fë^-^-xfô TOM junction to case 3.0 â'¢c/w A-106 ESAC25(C, N, D)(1 OA) I^IÉtì^ : Characteristics Â
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Abstract: filter Flywheel diode Notes: 1. Bias the Hall amplifiers so that the output voltage exceeds 50 mVpp , frequency (fc) is defined by the following equation. rnf r 108 «.1 «106 Timing Chart â -
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P-23TA

a106 diode

Abstract: diode A106 ESAC25(C, IN I, a a s s i t i » - K P ) ( 1 0 A ) ti*?*-? FAST RECOVERY DIODE 14$^: : Features High voltage by mesa design. 'A f K & f i High reliability m m m m Connection Diagram ESAC25-DDC IffliSs : Applications © ° - f - ° ® High speed pow er sw itchin g. ESAC25-DDN ® ° - - ° ® ESAC25-DDD © - Maximum Ratings and Characteristics : A bsolute M axim um Ratings , m A ms *C/W A-106 ESAC25(C,N ,D)(1 OA) : Characteristics O IOO 200 300
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a106 diode

Abstract: diode FAG 50 0.312 m a «t Rth(j-c) Diode 0.60 °C/W Rtn(c-0 with Thermal compound 0.05 A-106 6MBI50L-120 , / / , f / y
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diode FAG 50 diode sg 5 ts 6MBI50L120 FAG 50 diode l series IGBT 6mbi50l

x10 21

Abstract: for range Changing. ï' Voltage (DC/AC), current(DC/AC), resistor, diode, frequency and duty cycle , Measurement Voltage2 Voltage with frequency3 Current2 Current with frequency3 Resistance Diode , (STATUS): - Voltage (â'000â'), current (â'010â'), resistance (â'100â') and diode (â , '™ for positive. In AC, â"¦ and diode measurement, this bit can be ignored. BATT â'˜Hâ'™ for , . â'˜Hâ'™ for negative; â'˜Lâ'™ for positive. In AC, â"¦ and diode measurement, this bit can be ignored
Cyrustek
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x10 21 ES51999 400MH BUFX10
Abstract: following equations: Rup = 1.546 ×107 + 3.608 ×106 â' Vo + 252 × Vo + â' 3025 Rdown = (in â"¦) Vo+ is the desired up output voltage 1.546 ×107 â' 2.575 ×106 â' Vo â' 252 × Vo â , to do this, a high-current, low Vf, schottky diode must be placed at the +Vo pin of each supply as Wall Industries
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LV12S12-150 597-WA 597-WALL ISO9001-2000
Abstract: following equations: Rup = 1.546 ×107 + 3.608 ×106 â' Vo + 252 × Vo + â' 3025 Rdown = (in â"¦) Vo+ is the desired up output voltage 1.546 ×107 â' 2.575 ×106 â' Vo â' 252 × Vo â , to do this, a high-current, low Vf, schottky diode must be placed at the +Vo pin of each supply as Wall Industries
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