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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

TRANSISTOR A98

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: voltage is sensed across the transistor, the transistor is switched off. In order to reduce the radiated , defined by the gateâ'drain capacitance of output transistor and the (limited) current that drives the , forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drainâ'bulk diode of the transistor. Depending on the ON Semiconductor
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equivalent transistor A92

Abstract: TRANSISTOR A98 TC78S600FNGFTG Characteristics Symbol Test circuit Output transistor switching characteristics (Design , '20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 (%) 100 98 92 83 71 56 38 20 IB 0 â'20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 , 20 IA 0 â'20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 (%) 100 98 92 83 71 56 38 20 IB 0 â'20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 t0 t1 t2 t3 t4 t5
Toshiba
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equivalent transistor A92 TRANSISTOR A98 TC78S600FNG/FTG SSOP20 QFN24 P-WQFN24-0404-0 SSOP20-P-225-0
Abstract: gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency , BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Based on , , 802.16-2004 OFDM, P/A=9.8 dB 4.0 3.5 5.50 GHz 5.65 GHz 5.80 GHz 3.0 EVM (%) 2.5 2.0 , , 802.16-2004 OFDM, P/A=9.8 dB 35 30 Drain Efficiency (%) 25 5.50 GHz 20 5.65 GHz 5.80 GHz 15 , versus Frequency of CGH55030 in Broadband Amplifier Circuit, 802.16-2004 OFDM, P/A=9.8 dB, POUT = 5 W Cree
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CGH55030F CGH5503 CGH55030F-TB 64-QAM

equivalent transistor A92

Abstract: TB6600HG transistor switching characteristics Output leakage current Symbol tr VNF = 0 V, Output: Open , switched to Charge mode for current sensing. 11 2013-10-2 TB6600HG Output Stage Transistor , PGND Slow Mode Fast Mode Output Stage Transistor Operation Functions CLK U1 U2 L1 , Power transistor current Dead band 1μs or more(typ.) Output state ALERT output Output on , MO (%) 100 98 92 83 71 56 38 20 IA 0 â'20 â'38 â'56 â'71 â'92 â'98 â
Toshiba
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HZIP25-P-1

2N6084

Abstract: 2N6081 transistor is designed primarily for VHF mobile and marine trans mitters. The device utilizes emitter , curves) 2N6080 IMPEDANCE DATA (typical) NETWORK IMPEDANCE AT TRANSISTOR TERMINALS fo = 175MHz, Vce = , .3 7.6 + ¡9.8 0.5 5.8 2.9 + ¡0.4 8.4 + ¡6.9 .6 a882NGD80-02 POWER IN -Ç> = 173MHï Vcc â , POWER INPUT (WATTS) S882N6081 01 POWER OUT AND EFFICIENCY vs POWER IN NETWORK IMPEDANCE AT TRANSISTOR , fWATTS) sasawiK; in POWER OUT AND EFFICIENCY vs POWER IN NETWORK IMPEDANCE AT TRANSISTOR TERMINALS f0
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OCR Scan
2N6084 SD1012 2N0080 S01014-02 2N6081 SD1229-07 2N6083 2n6080 RF 2N6082 230MH 175MH

transistor A144

Abstract: a144 transistor Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in highâ'"gain, lowâ'"noise, ultraâ'"linear, tuned , TRANSISTOR NPN SILICON â'¢ High Power Gain â'" GU(max) = 16.5 dB (Typ) @ f = 500 MHz â'¢ Ion Implanted , 63 61 55 0.45 0.33 0.30 0.32 0.38 0.46 â'"60 â'"86 â'"83 â'"99 â'"98 â'"96 90 , '"102 â'"100 â'"98 Table 1. Commonâ'"Emitter Sâ'"Parameters (continued) R1 C5 + Y3 C7
M/A-COM
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transistor A144 a144 transistor CT050 45004B
Abstract: ' â' â' â' â' â' 22 â'98 120 60 30 15 â' â' â' â' 19 â'98 121 â' â' â' â' â' â' â' 17 â'98 122 61 â , ' â'17 â'98 136 68 34 17 â' â' â' â' â'19 â'98 137 â' â' â' â' â' â' â' â'22 â'98 138 69 â' â' â' â , ' â' â'98 â'22 184 92 46 23 â' â' â' â' â'98 â'19 185 ON Semiconductor
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AMIS-30421 30421/D

TB6600HG

Abstract: TB6600HG Output Stage Transistor Operation Mode Vcc Vcc U1 U2 ON OUT1 U1 OFF Note , ON L1 OFF Note U1 PGND Slow Mode Fast Mode Output Stage Transistor Operation , after ENABLE pin outputs high. (*) 6.5A (typ.) DMOS Power transistor current Dead band 1Î , '38 â'56 â'71 â'83 â'92 â'98 â'100 (%) 100 98 92 83 71 56 38 20 IB 0 â'20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 t16
Toshiba
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TB6600

Abstract: 2014-03-03 TB6600FG Output Stage Transistor Operation Mode Vcc Vcc U1 U2 ON OUT1 U1 , Load OUT2 ON L1 OFF Note U1 PGND Slow Mode Fast Mode Output Stage Transistor , frequency just after ENABLE pin outputs high. (*) 6.5A (typ.) DMOS Power transistor current Dead , '38 â'56 â'71 â'83 â'92 â'98 â'100 (%) 100 98 92 83 71 56 38 20 IB 0 â'20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 t16
Toshiba
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TB6600 HQFP64-P-1010-0
Abstract: , the LMH6672 can drive a 50â"¦ load to 16.8 VPP swing with only â'98 dBc distortion, fully , 100â"¦ â'85 dBc VO = 2 VPP, f = 100 kHz, RL = 25â"¦ â'98 dBc VO = 2 VPP, f = 1 MHz , swings positive, one transistor of the output pair will conduct the load current, while the other transistor shuts off, and dissipates no power. During the negative signal swing this situation is reversed, with the lower transistor sinking the load current while the upper transistor is cut off. The current National Semiconductor
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SNOS957F

AVANTEK utc

Abstract: avantek .105°C/W Active Transistor Power Dissipation .,.176 mW Junction Temperature Above , 10.632 126.0 10.685 120.6 10.757 113.5 10.784 â  105.9 - 10.885 â'¢98,6 10.965 91,0 11.017 83,1
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OCR Scan
AVANTEK utc avantek 8713 rf UTO/UTC/PPA1043 PP-38

transistor A1277

Abstract: transistor A1286 Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , '"4.6 â'"9.8 â'"15.1 â'"20.8 â'"27.0 â'"31.7 â'"37.3 â'"45.3 â'"54.2 â'"66.3 â'"81.4 â'"93.7 â
Teledyne Cougar
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transistor A1277 transistor A1286 transistor on 4409 MIL-HDBK-217E

transistor smd f36

Abstract: 10UF PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , , 802.16-2004 OFDM, P/A=9.8 dB WiMax EVM & Eff. vs. Pout at 3.6GHz 4.0 40 3.5 35 30 Eff(3.6
Cree
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transistor smd f36 10UF 33UF CGH35015-TB CGH35015 tRANSISTOR 2.7 3.1 3.5 GHZ cw CGH3501 CGH35015F-TB
Abstract: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , 802.16-2004 vs. Pout at 2.5GHz F=2.5 GHz,EVM & EfficiencyOFDM, P/A=9.8 dB 5.0 25 EVM(2.5) Eff(2.5 Cree
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CGH2701 CGH27015F-TB
Abstract: 15 , '95 , '100 , '100 Analog Devices
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AD8342 MO-220-VEED-2 CP-16-3 AD8342ACPZ-REEL7 AD8342ACPZ-R21 AD8342ACPZ-WP1

ofdm amplifier

Abstract: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 EVM(2.5) 4.0 Eff(2.5) 20 25 EVM
Cree
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ofdm amplifier
Abstract: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screwdown, flange and solder-down, pill packages , =2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 25 EVM(2.5) Eff(2.5) 20 15 2.0 10 1.0 Cree
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27015P

CGH27015F-TB

Abstract: amplifier circuit PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , OFDM, P/A=9.8 dB 5.0 25 EVM(2.5) Eff(2.5) 20 15 2.0 10 1.0 EVM (%) 3.0
Cree
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amplifier circuit 470PF CGH27015-TB cree rf
Abstract: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , Broadband Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 25 EVM(2.5) Eff Cree
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diode u2 a71

Abstract: VNF Characteristic ⯠tr Output transistor switching characteristics tpLH CLK to , '38 â'56 â'71 â'83 â'92 â'98 â'100 (%) 100 98 92 83 71 56 38 20 IB 0 â'20 â'38 â'56 â'71 â'83 â'92 â'98 â'100 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 , drawn out, each transistor is turned ON and the power flows in the opposite-to-normal direction; as a , Transistor Operation Mode VM VM U1 U2 U1 OFF OFF OFF ON ON L1 L2 VM
Marktech Optoelectronics
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diode u2 a71 TB6560HQ/FG TB6560HQ TB6560FG 27/HQFP64-P-1010-0
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