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Part Manufacturer Description Datasheet BUY
A53934-000 TE Connectivity (A53934-000) RRA-52G-UTG-608-UK visit TE Connectivity
CR2699-000 TE Connectivity (CR2699-000) RRA-52G-TUG-608 visit TE Connectivity
768766-000 TE Connectivity (768766-000) RRA-52G-TUG-608-UK visit TE Connectivity
CR2703-000 TE Connectivity (CR2703-000) RRA-52G-UTG-608 visit TE Connectivity
TMS465809 Texas Instruments TMS465809 8 388 608-WORD BY 8-BIT EXTENDED DATA OUT DRAM visit Texas Instruments
TMS464809 Texas Instruments TMS464809 8 388 608-WORD BY 8-BIT EXTENDED DATA OUT DRAM visit Texas Instruments

KU 608 Datasheet

Part Manufacturer Description PDF Type
KU608 N/A Cross Reference Datasheet Scan
KU608 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
KU608 N/A Shortform Data and Cross References (Misc Datasheets) Scan
KU608 Tesla Transistor Scan

KU 608

Catalog Datasheet MFG & Type PDF Document Tags

KU608

Abstract: KU 608 Bestückungsseite. Masse Kühlblech KU 608 v.Kollektor TC607 zur Ba si s KU608 Bild 1 Um durch die abweichenden elektrischen Eigenschaften den K T J 608 nicht zu gefährden, ist es erforderlich, R 5682 und Dr , VEB K607 Tr 5681 Dr 5681 T5282 KU 608 68 HERAUSGEBER: ÿ ï i -ö 33 R568ir 10
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C5683 KU 608 service-mitteilungen servicemitteilungen gt 403 b R5682 IIX/18/379

rema andante

Abstract: KT 817 transistor Spezifikation wird um folgende Positionen erweitert: 5. IIngat» von KP 608 im NOVATRON / NOVAMAT I» vergangenem Produktionszeitraum sind in der Hochspannungsge winnung sun Teil Transistoren KU 608 (EDV-Nr. 83 5 3204) anstelle 4er KT 808 AM eingesetzt worden. Die Transistoren KU 608 können in Ersatzfall beliebig
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rema andante KT 817 transistor colortron KT 817 817 b rema- radio SD335A 12Q4JOO-65JDO

KT 819 transistor

Abstract: 2N2222A 338 BU 112 330 150 >8 BU 112 550 550 12 SU 160 1500 (700) SU 160 1500 (700) BU 406 400 KU 608 210 80 ' >10 BU 112 200 450 KU 608 80 KU 608 40 20 SF 137 D 20 30 75 2N 2219 A 100 25 SSY 20 B 40 60 35 SSY 20 , 1 1 2 550 BU 1 1 2 KU 608 2 10 145 20 >20 120 4 GF 147 S KT 816 W-.BD 236 SF 359 KT 3107 Sh , , KT 817 P 701, KT $17 KT Ì09 KT 805 KU 608 KU 612, C, KT 807 1 KU 612, G,W A A, KT 809 A, 2 3 , KU 607 KU 608 KU 611 KU 612 KUY 12 MA 393 MD 6002 MD 6003 MD 6100 MD 7002 MD 7002 A MD, 7003 A MD
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH

colormat 4506

Abstract: service-mitteilungen YT-Tunern - Einsatz des Netztrafos NT 103 A im SNT - Einsatz von KU 608 Schaltbildnummernänderung Neues
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colormat 4506 serviceanleitung kr 660 RFT KR 650 KR 660 stassfurt colormat KR 650

transistor BU 5027

Abstract: transistor KT 816 . Änderung ^ BD 234, KT 816 B KU 607, KU 608 BD 234, ASZ 1015, ASZ1016 ASZ 1017, P 216, P 217 (letztere 2 mit
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KT315 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 220-S 136/G

ku 606

Abstract: SV2004 = 45°c GD 608 736 (C) 400 110 KU 1504 GF 608 736 (C) 600 2» KU 1506 6xM5 736 GJ 608 736 (C) 1000 380 KU 1510 250 a / tamb = 45°c GD 608 646 (C) 400 110 KU 1504 GF 608 646 (C) 600 220 KU 1506 6xP150 646 GJ 608 646 (C) 1000 380 KU 1510 450 a / tamb = 45°c GD 611 656 (C) 400 110 TV , 11 250 A2 s KU 1002, (R) * KU 1004, (R) * KU 1006, (R) * KU 1008, (R) * KU 1010, (R) * KU 1012, (R) * KU 1014, (R) * 100 200 400 600 800 1000 1200 1400 1500 1,4 300 20 150 130 A / Tease = 100°C Tj =
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ku 606 SV2004 TNF300 TNF150

Thomson-CSF THYRISTOR tk 1204

Abstract: TK1204 ) 1000 380 TK 1410 KU 1010 200 A / Tamb = 45°C GD 608 800 6560 (C) 400 110 TK 2604 KU 1504 GF 608 800 6560 (C) 600 220 TK 2608 KU 1506 6xTNF150 6560 GJ 608 800 6560(C) 1000 380 TK 2610 KU 1510 300 , KU 1506 6xP150 6460 GJ 609 809 6460(C) 1000 380 TK 3610 KU 1510 400 A / Tamb = 45°C GD 608 809 , / Tamb = 45°C GO 601 84 6160 (C) 400 110 TK 1204 KU 1004 6xP80 6160 GF 601 84 6160 (Cl 600 220 TK 1206 KU 1006 GJ 601 84 6160 (C) 1000 380 TK 1210 KU 1010 150 A / Tamb = 45°C GD 601 83 6460 (C
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Thomson-CSF THYRISTOR tk 1204 TK1204 TK 1204 M KU 601 Thyristor 1504 tk 100 A

diode 736

Abstract: ku 606 ) 1000 380 RG 610 150 a / tamb = 45°c GD 608 736 (C) 400 110 KU 1504 GF 608 736 (C) 600 2» KU 1506 6xM5 736 GJ 608 736 (C) 1000 380 KU 1510 250 a / tamb = 45°c GD 608 646 (C) 400 110 KU 1504 GF 608 646 (C) 600 220 KU 1506 6xP150 646 GJ 608 646 (C) 1000 380 KU 1510 450 a / tamb = 45Â
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diode 736 Mu 503 gf diode DIODE 100A DIODE REDRESSEMENT MU Thomson-CSF diode

ku 606

Abstract: RG604 380 RG 610 150 a / tamb = 45°c GD 608 736 (C) 400 110 KU 1504 GF 608 736 (C) 600 2» KU 1506 6xM5 736 GJ 608 736 (C) 1000 380 KU 1510 250 a / tamb = 45°c GD 608 646 (C) 400 110 KU 1504 GF 608 646 (C) 600 220 KU 1506 6xP150 646 GJ 608 646 (C) 1000 380 KU 1510 450 a / tamb = 45°c GD
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RG604 1506 400-110 RG606 C-400 C1000

Katalog tesla tranzistor

Abstract: KD502 Tranzistory 70 W v kovovém pouzdru KU Y12 A Tranzistory 120 W v kovovém pouzdru KUX41N A V Y S V E T IIV
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Katalog tesla tranzistor KD502 KD3055 KD617 KU607 KU612 KC31S K03773 K0336 K0338 VQ0321 KUY12

fr 608 diode

Abstract: DIODE REDRESSEMENT GJ 503 546 (C) 1000 380 RG 610 150 A / Tamb = 45°C GD 608 736 (C) 400 110 KU 1504 GF 608 736 (C) 600 2» KU 1506 6xM5 736 GJ 608 736 (C) 1000 380 KU 1510 250 A / Tamb = 45°C GD 608 646 (C) 400 110 KU 1504 GF 608 646 (C) 600 220 KU 1506 6xP150 646 GJ 608 646 (C) 1000 380 KU 1510 450 A , A / Tcase = 100°C Tj = 150°C l2t = 5000A2 s RG 602, (R) RG 604, (R) RG 606, (R) RG 608, (R
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fr 608 diode 1N SERIES DIODE B-408 diode ku 611 KU 612 diode RP 4040 1000A2 2500A2 CB-34 3200A2 DRB402 DRB406

KU 612

Abstract: BTW 600 604 RG 606 RG 608 RG 610 RG 612 BTW 50 200 BTW 50 400 BTW 50 600 BTW 50 800 BTW 50 1000 BTW 50 1200 2 , 1200 (C) 100 200 400 600 800 1000 1200 KU 1002 KU 1004 KU 1006 KU 1008 KU 1010 KU 1012 TK 1802 TK 1804 , (C) BDT 150 800 (C) BDT 150 1000 (C) BDT 150 1200 (C) 150 200 400 600 800 1000 1200 KU 1502 KU 1504 KU 1506 KU 1508 KU 1510 KU 1512 TK 2602 TK 2604 TK 2606 TK 2608 TK 2610 TK 2612 2 x TNF250 (C) With
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BTW 600 btw 50 200 ts 435 RG612 BTW50-1200 TK1804

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X A / Tcase = 100°C tj = 150°C l2t = 5000A2 s RG 602, (R) RG 604, (R) RG 606, (R) RG 608, (R , (C) BDD 100 1000 (C) BDD 100 1200 (C) 100 200 400 600 800 1000 1200 KU 1002 KU 1004 KU 1006 KU 1008 KU 1010 KU 1012 2 x KNF 150 Ã" o BDD 150 200 (C) BDD 150 400 (C) BDD 150 600 (C) BDD 150 800 (C) BDD 150 1000 (C) BDD 150 1200 (C) 150 200 400 600 800 1000 1200 KU 1002 KU 1004 KU 1006 KU 1008 KU 1010 KU , ) BDD 250 1200 (C) 250 200 400 600 800 1000 1200 KU 2402 KU 2404 KU 2406 KU 2408 KU 2410 KU 2412 2 x TNF
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DIODE REDRESSEMENT 4040 RP 8040 X la 8040 G 402 rp 402 rp DRA402 DRB410

Diodes de redressement

Abstract: BAY18 604 F - RG 604 FT, (R) *RG 606 F - RG 606 FT, (R) «RG 608 F - RG 608 FT* (R) â'¢ RG 610 F - RG 610 FT , F, (FR) 125 100 400 400 1500 1,6 300 10 22 â'¢ KU 1006 F, (FR) 125 100 600 400 1500 1,6 300 10 22 â'¢ KU 1008 F, (FR) 125 100 800 400 1500 1,6 300 10 22 .KU 1010 F, (FR) 125 100 1000 400 1600 1.6
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Diodes de redressement BAY18 BAY21 650C fr 1004 diodes BOITIER MU86
Abstract: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ , FLK107MH-14 X, Ku Band Power GaAs FET POWER DERATING CURVE 10 Total Power Dissipation (W) 8 Drain Current , ) Drain-Source Voltage (V) 2 hadd (%) 40 FLK107MH-14 X, Ku Band Power GaAs +j50 +j25 13 12 14 15 , 1.402 1.521 1.764 1.697 1.225 131.6 114.8 90.5 85.8 79.8 74.2 71.9 60.8 53.5 44.7 30.5 19.7 -4.8 -50.1 , 134.6 125.6 113.9 102.8 89.2 69.0 87.9 3 FLK107MH-14 X, Ku Band Power GaAs FET Case Style "MH" Fujitsu
Original
FLK102MH-14 FCSI0598M200

FLK102MH-14

Abstract: FLK107MH-14 FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs FET , ) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 14 +j25 , -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 53.5 , S-Parameters, click here 3 FLK107MH-14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style
Fujitsu
Original

FLK102

Abstract: FLK102MH-14 FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs FET , ) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 14 +j25 , -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 53.5 , S-Parameters, click here 3 FLK107MH-14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style
Eudyna Devices
Original
FLK102 ku Band Power GaAs FET

FLK102MH-14

Abstract: FLK102 FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs FET , ) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 14 +j25 , -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 53.5 , -14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style "MH" Metal-Ceramic Hermetic Package
Fujitsu
Original

FLK107MH-14

Abstract: fujitsu gaas fet FLK107MH-14 X, Ku Band Power GaAs FET FEATURES â'¢ High Output Power: P1dB = 30.0dBm(Typ.) â , Compression Point Edition 1.1 August 1999 FUJITSU FLK107MH-14 X, Ku Band Power GaAs FET POWER DERATING , FLK107MH-14 X, Ku Band Power GaAs FET S-PARAMETERS VDS = 10V, IDS = 250171A FREQUENCY (MHZ) MAG S11 ANG , .043 63.7 .827 156.0 12000 .699 -76.9 1.032 71.9 .049 62.1 .825 149.9 12500 .659 -98.1 1.109 60.8 , .108 -107.7 .654 69.0 16000 .878 -174.9 1.225 -99.6 .158 -171.2 .226 87.9 FUJITSU FLK107MH-14 X, Ku
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fujitsu gaas fet
Abstract: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ High Output Power , -14 X, Ku Band Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 VGS , ) 2 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku , 71.9 .049 62.1 .825 149.9 12500 .659 -98.1 1.109 60.8 .044 63.5 , .158 -171.2 .226 87.9 3 FLK107MH-14 X, Ku Band Power GaAs FET 1.0 Min. (0.039 Eudyna Devices
Original
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