500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SK2611(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 970 Best Price : $19.00 Price Each : $19.00
Shipping cost not included. Currency conversions are estimated. 

2SK2611 Datasheet

Part Manufacturer Description PDF Type
2SK2611 Toshiba N-Channel MOSFET Original
2SK2611 Toshiba Original
2SK2611 Toshiba Power MOSFETs Cross Reference Guide Original
2SK2611 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK2611 N/A Scan
2SK2611 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan
2SK2611 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, DC-DC converter, relay drive and motor drive applications Scan
2SK2611(F,T) Toshiba 2SK2611 - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original
2SK2611FT Toshiba 2SK2611FT - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original
2SK2611T Toshiba 2SK2611T - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original

2SK2611

Catalog Datasheet MFG & Type PDF Document Tags

2SK2611

Abstract: diode co35 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA 2SK2611 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( tt- MOS I I I ) (2SK2611) HIGH SPEED, HIGH VO LTA G E SW ITCHIN G APPLIC A TIO , TOSHIBA Semiconductor Reliability Handbook. 2SK2611 - 1 _ 1996-09-02_ T O S H IB A CO RPO RATIO N SEMICONDUCTOR TOSHIBA 2SK2611 TECHNICAL DATA (2SK2611 , 0V I D R = 9A, V G S = 0V d lD R / dt = 100A / ¡us - 1.6 20 - - 2SK2611 -2 1996-09-02 T
-
OCR Scan
diode co35 SC-65 2-16C1B

2Sk2611

Abstract: transistor 2sk2611 SEM ICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TO SH IBA 2SK2611 SILICON N CHANNEL MOS TYPE ( tt- M O S I I I ) TECHNICAL DATA (2SK2611) HIGH SPEED, HIGH VOLTAGE SWITCHING , Reliability Handbook. 2SK2611 - 1 _ 1996-09-02_ T O S H IB A C O RPO RA TIO N SEM ICONDUCTOR TO SH IBA 2SK2611 TECHNICAL DATA (2SK2611) ELECTRICAL CHARACTERISTICS , 9A, VGS = 0V IDR = 9A, VGS = 0V dlDR / dt = 100A / ¡us 1.6 20 - - 2SK2611 - 2
-
OCR Scan
transistor 2sk2611 2sk2611 transistor TE5500

k2611

Abstract: toshiba transistor k2611 TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE , 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Number of the Christian Era) 1998-01-21 2/5 TOSHIBA 2SK2611 ID - vds COMMON SOURCE Tc = 25 , 0.3 0.5 1 3 5 10 30 DRAIN CURRENT ID (A) 1998-01-21 3/5 TOSHIBA 2SK2611 RDS(ON) - Te Ed à £ I
-
OCR Scan
k2611 toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 K2611 toshiba

K2611

Abstract: toshiba transistor k2611 TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY , 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , the Christian Era) 2000-02-02 2/5 TOSHIBA 2SK2611 ID - vds COMMON SOURCE Tc = 25°C i5y 'io , 0.3 0.5 1 3 5 10 30 DRAIN CURRENT ID (A) 2000-02-02 3/5 TOSHIBA 2SK2611 RDS(ON) - Te Ed à Â
-
OCR Scan
20kO

2sk2611

Abstract: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK2611 DC-DC CONVERTER, RELAY DRIVE AND MOTOR , notice. 9 # 1998 01-21 1/5 - TO SHIBA 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25 , ) 1998 01-21 2/5 - TO SHIBA 2SK2611 id - vds id - vds 4 8 12 16 , CURRENT I d (A) 1998 01-21 3/5 - TO SHIBA 2SK2611 R d s (ON) - Te IDR - VDS -4 0 0
-
OCR Scan

k2611

Abstract: toshiba transistor k2611 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , handle with caution. 1 2009-09-29 2SK2611 Electrical Characteristics (Ta = 25 , substances in electrical and electronic equipment. 2 2009-09-29 2SK2611 3 2009-09-29 2SK2611 4 2009-09-29 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2009-09-29 2SK2611 RESTRICTIONS ON PRODUCT USE · Toshiba
Toshiba
Original
K2611 equivalent equivalent transistor k2611 INFORMATION ON K2611 K2611 circuits transistor Toshiba K2611

toshiba transistor k2611

Abstract: K2611 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , . Please handle with caution. 1 2006-11-10 2SK2611 Electrical Characteristics (Ta = 25 , )-free finish. 2 2006-11-10 2SK2611 3 2006-11-10 2SK2611 4 2006-11-10 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2006-11-10 2SK2611 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is
Toshiba
Original
k2611 Transistor K261-1 k2611 a jeita sc-65

K2611

Abstract: transistor k2611 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , . Please handle with caution. 1 2006-11-10 2SK2611 Electrical Characteristics (Ta = 25 , )-free finish. 2 2006-11-10 2SK2611 3 2006-11-10 2SK2611 4 2006-11-10 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 EAS = 1 B VDSS L I2 2 B VDSS - VDD 2006-11-10 2SK2611 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original
and/equivalent transistor k2611

2sk2611 transistor

Abstract: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE ( tt-M O SIII) 2SK2611 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE , notice. 9 9 1998 11-12 - 1/5 TO SH IBA 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25 , TO SHIBA 2SK2611 id - Vds id - Vds < < Q ÊH Q 6 h ¡Z¡ Pi D O 3 ¿i , 3/5 TO SHIBA 2SK2611 Rd s (o n ) - Te Cd IDR - VDS 0 2 1 Oz 9 w O SQ Vi a
-
OCR Scan

2SK2611

Abstract: transistor 2sk2611 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 1.1 , device. Please handle with caution. 1 2002-06-27 2SK2611 Electrical Characteristics (Ta = 25 , 2002-06-27 2SK2611 3 2002-06-27 2SK2611 4 2002-06-27 2SK2611 RG = 25 VDD = 90 V , 2SK2611 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

2SK2611

Abstract: transistor 2sk2611 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 1.1 , device. Please handle with caution. 1 2002-06-27 2SK2611 Electrical Characteristics (Ta = 25 , 2002-06-27 2SK2611 3 2002-06-27 2SK2611 4 2002-06-27 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2002-06-27 2SK2611
Toshiba
Original

2SK2611

Abstract: LDR 24v  2SK2611 IMUtll) o Sil. mwEx-t o i-n'7-f^ffl â'¢ t>mtt*»"». : RDS(ON)=» »n(WH) â'¢ «Ã"linfEilr K 5 9 > * : |Yfs|=7.0S(«*) â'¢ ; IDSS = 100//A(»*) . > h ? 4 y-ct. : 7lh = 2.0~4.07(7DS=107. ID = lmA) (Ta « 25*C) »fi ü K »te KV* > â'¢ V â'" X IBJ * EE vpss 900 7 K i"f >-y- h nwi X jfc DC , {: Iiimmu: ra.t < ti ? w». 2SK2611 (2SK2611) (Ta a 25°C) JR i i¿ ? m Ã" * # ft* 11* Y - h M ti
-
OCR Scan
LDR 24v LT 7207

K2611

Abstract: toshiba transistor k2611 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , . Please handle with caution. 1 2010-01-29 2SK2611 Electrical Characteristics (Ta = 25 , electrical and electronic equipment. 2 2010-01-29 2SK2611 3 2010-01-29 2SK2611 4 2010-01-29 2SK2611 RG = 25 VDD = 90 V, L = 15 mH EAS = B VDSS 1 L I2 - B V 2 DD VDSS 5 2010-01-29 2SK2611 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its
Toshiba
Original
k261
Abstract: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S , TOSHIBA 2SK2611 ELECTRICAL CHARACTERISTICS Ta = 25°C) SY M BO L C H A R A C T E R IS T IC G , 1998 11-12 - 2/5 TOSHIBA 2SK2611 id vds - id < - vds < Q D à , 2SK2611 IDR - VDS R d s (ON) - Te K O o ¿ 2 Q < w 2 C d 0 3 2~ O2 -
OCR Scan

toshiba 2sk2611

Abstract: 2SK2611 TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2611 HIGH , subject to change without notice. 1998-11-12 1/5 TOSHIBA 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25 , (Last Number of the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2611 id - VDS COMMON SOURCE Tc = 25 , 0.3 0.5 1 3 5 10 30 DRAIN CURRENT ID (A) 1998-11-12 3/5 TOSHIBA 2SK2611 RDS(ON) - Te Ed à ¡5 I _ a , 120 160 200 CASE TEMPERATURE Tc (°C) 0 20 40 60 TOTAL GATE CHARGE 1998-11-12 4/5 TOSHIBA 2SK2611 rth
-
OCR Scan
961001EAA2

D408 mosfet

Abstract: mosfet D412 °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 24.4 °C Tc = 74.4 °c TOSHIBA Tj = Tc + (0 j-c X Pd) = 83.6 °C D.F. = 55.7 % Q104 Tjmax= 150 °C 0j-c = 0.833 °C/W Pmax = 150.0 w 2SK2611 Pd = 11 W ATc = , °C 0j-c = 0.833 °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 27.4 °C Tc = 77.4 °C TOSHIBA Tj = , 2SK2611 Pd = 11 W ATc = 30.4 °c Tc = 80.4 °C TOSHIBA Tj = Tc + (0 j-c xPd) = 89.6 °c D.F. = 59.7 % , D.F. = 41.6 % Q103 Tjmax= 150 ®C 0j-c = 0.833 °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 24.1 °C
-
OCR Scan
D408 mosfet mosfet D412 M51995AFP mosfet d408 D407 mosfet MIP0224SY ZUP-800 IA550-79-01 R-2-12 R-13-16 R-17-18 R-19-36

2SK2611

Abstract: 2SK3669 A RDS ON Max 800 7 1.7 900 9 1.6 900 5 2.5 2SK2746 2SK2611 2SK2610 3
Toshiba
Original
TMP92CA25FG QFP144 2SK3633 2SK3669 H1 SOT-89 fet sot89 fet 03-3457-3405FAX RTE25/15 512MB 900/H1

2SK2056

Abstract: 2SK1603 2SK2789 2SK1358 2SK2611 2SK1928 2SK2789 2SK1362 2SK2610 2SK1929 2SK2884 2SK1363
-
Original
2SK794 2SK1377 2SK2056 2SK2236 2SK1603 2SK2352 2SK537 2SK1723 2SK1213 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231

2sk3625

Abstract: 2SK3566 equivalent (0.55) 2SK3310 (0.65) 2SK3407 (0.65) 2SK3869 (0.68) 10 2SK2611 (1.4) 2SK3473 (1.6) 2SK3878 , ) 1.6 10 4.5 38 2SK2611 ID (A) trr (nC) Typ. ID (A) 2SK3126 -MOS MACH , 70 2SK2611 900 9 150 TO-3P (N) 1.2 1.4 10 4.0 58 2SK2968 900
-
Original
2SK2962 2sk3625 2SK3566 equivalent NTPCA8008-H 2SK3868 2sj618 2sk 2sj complementary mosfet 2SK2963 2SJ508 2SJ509 2SK3670 2SJ313

CEM-1 20Z

Abstract: LT KBJ406G INSPECTION OUTPUT DIODE REFERENCE ONLY) : TF493 ETD-34 : 2SK2611 TO-3P :CTB-34M TO-3P OUTPUT
V-Infinity
Original
TF-349 CEM-1 20Z LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C A/240VAC 230VAC KBJ406G 4AL/250V ET-28

YTA630

Abstract: MTW14P20 2SK2607 2SK2608 2SK2610 2SK2611 2SK2613 2SK2614 2SK2615 2SK2637 2SK2661 2SK2662 2SK2679 2SK2698 , 2SK2610 A 2SK2611 A 2SK2613 A 2SK2614 A 2SK2615 A TPC8008 A 2SK2661 A 2SK2662 A 2SK2679 A
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401
Showing first 20 results.