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LT1128MJ8 Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1012AMH Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1028MH Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, 75 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
RU-180-25 GE Critical Power SPD PLUG DIN RAIL 180 MCOV 25KA visit GE Critical Power
RU-180-50 GE Critical Power SPD PLUG DIN RAIL 180 MCOV 50KA visit GE Critical Power
CAR2024FP GE Critical Power CAR Series, Input: AC, Input Range: 180 - 264V, Vout: 24V, Iout: 83A, Efficiency: 91% visit GE Critical Power

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180-C Datasheet

Part Manufacturer Description PDF Type
180CRE20 Holmes 200V V[drm] Max., 210A I[T] Max. Silicon Controlled Rectifier Scan

180-C

Catalog Datasheet MFG & Type PDF Document Tags

NTE6111

Abstract: NTE6114 Current (TJ = +180°C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . ­40° to +180°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . , Reapplied, Initial TJ = +180°C 10930 A 11450 A Sinusoidal Halfwave, No Voltage Reapplied, Initial TJ = +180°C ° 13000 A 13600 A Sinusoidal Halfwave, 100% VRRM ° Reapplied, Initial TJ = +180°C 598 A2s 546 A2s Sinusoidal Halfwave, No Voltage ° Reapplied, Initial
NTE Electronics
Original
NTE6111 NTE6114

RF2TJ

Abstract: NTE6111 Current (TJ = +180°C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . -40° to +180°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . , Reapplied, Initial TJ = +180°C 10930 A 11450 A Sinusoidal Halfwave, No Voltage Reapplied, Initial TJ = +180°C 13000 A 13600 A Sinusoidal Halfwave, 100% VRRM Reapplied, Initial TJ = +180°C 598 A2s 546 A2s Sinusoidal Halfwave, No Voltage Reapplied, Initial TJ = +180°C
NTE Electronics
Original
RF2TJ
Abstract: Dissipation 1.6 Square wave =60°C 1.4 Square wave =120°C Sine wave =180°C 1.2 Square wave =180°C DC 1.0 360° 4.5 VR 4.0 360° 1.8 0.8 0.6 PR (W) 60 Reverse , Reverse Voltage (V) Forward Voltage (V) 3.5 3.0 2.5 =180°C 2.0 1.5 1.0 0.4 0.5 , Current DC 1.6 1.4 1.2 1.0 Sine wave =180°C 0.8 Square wave =180°C Io 0.6 Square , VR (A) 2.6 Io 20 2.0 DC Sine wave =180°C 1.8 Square wave =180°C 1.6 Fuji Electric
Original
ERB84-009

MIL-STD-810F shock

Abstract: MIL-STD-810F 500.4 transformation and primary to secondary isolation. 110°C (180°C) core 116°C (180°C) core 6 Input , and conducted noise in conjunction with the input capacitors. Quantity: 4 101°C (180°C) core Quantity: 1 104°C (180°C) core 8 Output Inductor Reduces output ripple in conjunction with the output capacitors. Quantity: 4 102°C (180°C) core Quantity: 2 117°C (180°C) core 9 Output , °C (180°C) core 119°C (180°C) core 119°C (180°C) core 127°C (180°C) core Quantity: 8 24 V (50
-
Original
MIL-STD-810F shock MIL-STD-810F 500.4 V24A12M400BL V24C5M100BL MIL-STD-810F MIL-STD-810F 509.4

R624

Abstract: R632X 5< iB 5 aB B 5 (c 150°C 150°C 150°C 105°C 180°C 180°C 180°C 180°C NA NA 200 200 200 200 , 1.8 (ç i lo lo lo lo 5< iB 180°C 5 aB 180°C i 180°C 5( < B 180°C 5< ? % 180°C 5Q 5(cB 150°C 5< iB
-
OCR Scan
R632X R624 R628 R618 silicon avalanche integrated bridge rectifiers R604 R611X R612X R614X R616X R631X

capacitor 106c

Abstract: 106C CAPACITOR COMPONENT COUNT MTBF 111°C (240°C) - core 135°C (240°C) - core 129°C (240°C) - core 121°C (180°C) - windings 132°C (180°C) - windings 133°C (180°C) - windings Quantity - 3 Film 48V (100V) Quantity - 1 Film , 105°C (125°C) - core 105°C (125°C) - core 110°C (180°C) - windings 110°C (180°C) - windings 110°C (180°C , 118°C (125°C) - core 112°C (180°C) - windings 113°C (180°C) - windings 121°C (180°C) - windings
Vicor
Original
capacitor 106c 106C CAPACITOR V48A5C400A V48B15C250A V48C12C150A 6063T-5 V48C2C50A V48C3V3C75A

Diode C84 009

Abstract: DIODE c84-009 =120°C 1.8 Sine wave =180°C Square wave =180°C DC 1.6 1.4 1.2 1.0 0.8 VR 8 , 2.8 2.8 Sine wave =180°C 2.4 Square wave =180°C 2.2 Square wave =120°C 2.0 , 2.6 2.4 2.2 2.0 1.8 1.6 DC Sine wave =180°C 1.4 Io 0.8 0.6 1.2 Square wave =180°C 1.0 Square wave =120°C 0.8 1.2 1.0 Io 40 VR Reverse Voltage (V) Square
Fuji Electric
Original
ERC84-009 Diode C84 009 DIODE c84-009 JA1010 Schottky Diode 50V 3A Diode C84

LINFINITY LX8383A

Abstract: CS-5205-1T3 Gnd N/A Max I Adj 100µA (adjust.) Thermal Thermal Shutdown Hyst 150¡C min 180¡C typ 25¡C typ , 7V N/A 100µA (adjust.) 150¡C min 180¡C typ 25¡C typ 3L TO-220 3L D2PAK CS5203 Adjust. 3A min 1% 1.635V max @ 3A N/A 7V N/A 100µA (adjust.) 150¡C min 180¡C typ , 2.5A VIN-VOUT=15V 17V 10mA 100µA (fixed) (adjust.) 150¡C min 180¡C typ 25¡C typ 3L TO , VIN-VOUT=9V 17V 10mA 100µA (fixed) (adjust.) 150¡C min 180¡C typ 25¡C typ 3L TO-220 3L D2PAK
Cherry Semiconductor
Original
LINFINITY LX8383A CS-5205-1T3 EZ1084ACT CS5205 LT1083 CS5231 CS1009 CS8101 CS8271 CS5253-1 CS5201-1

b83004

Abstract: B83-004 =60°C 1.2 Square wave =120°C Sine wave =180°C 1.0 Square wave =180°C DC 0.8 0.6 PR , VR 1.6 1.4 1.2 =180°C 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 IO 0.6 0.8 , (V) 3.0 2.8 2.2 VR=30V Sine wave =180°C 1.8 Square wave =180°C 1.6 Square , =180°C 1.4 Square wave =180°C 1.2 Square wave =120°C Square wave =60°C 1.0 0.8 0.6
Fuji Electric
Original
b83004 B83-004 ERB83-004 B83004

laser diode 405nm

Abstract: 405nm diode anywhere in the range +180C to +250C. Setpoint temperature is factory set to 180C. Specifications subject , diode temperature to be controlled to a set point temperature between +180C to +250C, (user adjustable , produces excellent wavelength and power stability and cooling the laser diode to 180C significantly , ) Temperature Stability ± 0.050C ± 0.050C ± 0.050C Setpoint Temp. Range3 +180C to +250C +180C to +250C +180C to +250C Analogue Modulation 0Hz to 10kHz - low=approx 0% high
Photonic Products
Original
laser diode 405nm 405nm diode 405nm blue Laser-Diode 100C 180C IEC60825

L Series

Abstract: 400 600 VRSM , maximum nonrepetitive peak rev. voltage V 500 700 IRRM max. TJ = 180°C Code , resistance V FM Max. peak forward voltage TJ = 180°C m V Ipeak = 942A, TJ = 25°C Thermal and Mechanical , ° 120° 90° 60° 30° 180° 120° 90° 60° 30° 300HF.L Tj = 180°C 300HF.L Tj = 180°C Peak Half , . Initial Tj = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6000 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = 180°C 5000 No Voltage Reapplied 4500 Rated Vrrm Reapplied
International Rectifier
Original
L Series I2014 DO-205AB

C81 004

Abstract: Diode C81 004 =180°C Square wave =180°C 1.2 VR 3.0 360° 2.0 1.8 DC (W) Reverse Power Dissipation (W) 2.4 2.2 DC 1.0 0.8 2.5 2.0 =180°C 1.5 1.0 PR Forward Power , =30V 4.0 (A) 3.5 3.0 DC 2.5 Sine wave =180°C Square wave =180°C 2.0 Square wave =120°C
Fuji Electric
Original
ERC81-004 C81 004 Diode C81 004 C81 diode 30A120 ERC81004

esab82-004

Abstract: Square wave =120°C Sine wave =180°C 1.5 Square wave =180°C DC 1.0 =180°C 1.0 , ) 160 1000 Junction Capacitance (pF) 140 DC 130 Sine wave =180°C Square wave =180°C
Fuji Electric
Original
esab82-004 ESAB82-004 SC-46

b83006

Abstract: ERB83-006 Dissipation 360° 2.5 2.0 Square wave =60°C Square wave =120°C Sine wave =180°C 1.5 Square wave =180°C DC 1.0 PR Forward Power Dissipation (W) 40 Reverse Voltage (V , =180°C 2.0 1.5 1.0 0.5 0.5 Per 1element 0.0 0.0 0.0 0.5 Io 1.0 1.5 2.0 , 2.4 2.2 2.0 DC 1.8 1.0 Io 0.8 1.6 Sine wave =180°C 1.4 Square wave =180°C
Fuji Electric
Original
ERB83-006 b83006 B83-006 B83006

c81 006

Abstract: 2.0 Sine wave =180°C Square wave =180°C 1.5 DC 4.0 Reverse Power Dissipation DC , =30V 3.6 3.0 3.4 DC 3.2 Square wave =180°C 2.4 Square wave =120°C 2.2 Square wave =60°C 2.0 1.8 1.6 1.4 1.2 1.0 Average Output Current (A) Sine wave =180°C 2.6 3.0 DC 2.8 2.6 2.4 2.2 Sine wave =180°C 2.0 Square wave =180°C 1.8 1.6 Square wave
Fuji Electric
Original
c81 006 ERC81-006

830nm

Abstract: 100C diode temperature can be set anywhere in the range +180C to +250C. Setpoint temperature is factory set to 180C. Specifications subject to change without notice. E&OE. Laser Safety The light emitted , laser diode temperature to be controlled to a set point temperature between +180C to +250C, (user , excellent wavelength and power stability and cooling the laser diode to 180C significantly increases laser , ) Temperature Stability ± 0.050C ± 0.050C Setpoint Temp. Range3 +180C to +250C +180C to +250C
Photonic Products
Original
830nm 300C 7ba Diode laser diode lifetime

circuit diagram for Design and Fabrication of 5V

Abstract: operating temperature range is from -55°C to +180°C (Tighter temperature stability is available) with a , temperature range -55°C to 180°C Low jitter and phase noise 3.3Vdc or 5Vdc operation Compliant crystal , Symmetry 40/60% Operating Temperature 0°C to +150°C (1) -20°C to +180°C (Z) -55°C to +180°C (Y , A: HCMOS/ACMOS Temperature Range 1: 0°C to 150°C Z: -20°C to 180°C Y: -55°C to 180°C 2: 0
Vectron International
Original
circuit diagram for Design and Fabrication of 5V PX-570 MIL-STD-883 10M0000000 D-74924

100C

Abstract: 180C the range +180C to +250C. Setpoint temperature is factory set to 180C. Specifications subject to , controlled to a set point temperature between +180C to +250C, (user adjustable), and with a stability of , excellent wavelength/power stability and cooling the laser diode to 180C significantly increases laser , ± 0.050C Setpoint Temp. Range3 +180C to +250C +180C to +250C Analogue Modulation 0Hz
Photonic Products
Original

100C

Abstract: 180C temperature can be set anywhere in the range +180C to +250C. Setpoint temperature is factory set to 180C. , controlled to a set point temperature between +180C to +250C, (user adjustable), and with a stability of , excellent wavelength and power stability and cooling the laser diode to 180C significantly increases laser , ) Temperature Stability ± 0.050C ± 0.050C Setpoint Temp. Range3 +180C to +250C +180C to +250C
Photonic Products
Original

I2014

Abstract: diode 300hf peak reverse voltage V repetitive peak rev. voltage V TJ = 180°C 40 400 500 10 , TJ = 180°C Ipeak = 942A, TJ = 25°C Thermal and Mechanical Specifications Parameter 300HF , Conduction Angle 100 300HF.L Tj = 180°C 50 0 0 50 100 150 200 250 300 350 Maximum Average , 350 300 250 200 RMS Limit 150 Conduction Angle 100 300HF.L Tj = 180°C 50 0 0 , Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 180°C @ 60 Hz 0.0083 s @ 50 Hz
International Rectifier
Original
diode 300hf HF-40

PT1000 CONVERSION TABLE

Abstract: Ni1000 CONVERSION TABLE /NI100), 200uA (PT1000/NI1000) Range of input PT100: -180°C ~ 800°C NI100: -80°C ~ 170°C PT1000: -180°C ~ 800°C NI1000: -80°C ~ 170°C PT100: -292°F ~ 1,472°F NI100: -112°F ~ 338°F PT1000: -292°F , example: Mode 0 (H'0000): PT100: -180°C ~ 800°C Mode 1 (H'0001): NI100: -80°C ~ 170°C Mode 2 (H'0002): PT1000: -180°C ~ 800°C Mode 3 (H'0003): NI1000: -80°C ~ 170°C Mode 4 (H'0004): 0~300 . Mode -1 (H'FFFF , Digital output +3,000 Measured input impedance 0 300 Mode 0, 2 of CR#2~ CR#5 -180°C ~ 800
-
Original
DVP04PT-E2 PT1000 CONVERSION TABLE Ni1000 CONVERSION TABLE PT1000 table CONVERSION PT1000 temperature sensor 04PT-E2 5011686600-E2P0 DVP-1130530-01 C1604-1989 D9900 D9999

aegis A1B 15

Abstract: aegis A1B phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 180°C Tj initial. Data , that plotted. 25°C Coefficients 180°C Coefficients A 0.990043834 -0.107758622 B , 25°C W0642WC160-240 Issue 1 180°C SSC 0.18K/W DSC 0.09K/W Thermal impedance (K/W , ) = 180°C 2 2 I2t: VRRM10V Maximum I t (A s) Total peak half sine surge current - IFSM , -240 Issue 1 Tj = 180°C W0642WC160-240 Issue 1 Tj = 180°C Recovered charge - Qra (µC) Total
AEGIS Semiconductores
Original
DO-203AA aegis A1B 15 aegis A1B aegis a1b 14 05 aegis A1A aegis A1B 15.08

W0642WC

Abstract: W0642WC220 COMPONENT COUNT MTBF 111°C (240°C) - core 135°C (240°C) - core 129°C (240°C) - core 121°C (180°C) - windings 132°C (180°C) - windings 133°C (180°C) - windings Quantity - 3 Film 48V (100V) Quantity - 1 Film , 105°C (125°C) - core 105°C (125°C) - core 110°C (180°C) - windings 110°C (180°C) - windings 110°C (180°C , 118°C (125°C) - core 112°C (180°C) - windings 113°C (180°C) - windings 121°C (180°C) - windings
Westcode Semiconductors
Original
W0642WC240 SW16-24CXC380 W0642WC220 W0642WC W0642 W-064 W0642WC160 VDRM/100 D-68623

W5334MK

Abstract: D-68623 diode temperature to be controlled to a set point temperature between +180C to +250C, (user adjustable , produces excellent wavelength and power stability and cooling the laser diode to 180C significantly , ) Temperature Stability ± 0.050C ± 0.050C ± 0.050C Setpoint Temp. Range3 +180C to +250C +180C to +250C +180C to +250C Analogue Modulation 0Hz to 10kHz - low=approx 0% high , anywhere in the range +180C to +250C. Setpoint temperature is factory set to 180C. Specifications subject
Westcode Semiconductors
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W5334MK200 W5334MK AD22150 W5334MK200-W5334MK220 W4987MK200-220 VRRM/100 W5334MK220

IXYS DSA 1-16D

Abstract: DIODE DSA 1-16D ) Half-sinewave, 180°C Tj initial. Provisional Data Sheet. Types W4693QR050 to W4693QR080 Issue 1 Page 1 of , is limited to that plotted. 25°C Coefficients A B C D 0.8298867 9.155618×10 -3 -5 -3 180°C , W4693QR050-080 AD Issue 1 KSC ASC 180°C 25°C 0.01 DSC Instantaneous forward current - IFM , - IFSM (A) Tj (initial) = 180°C I2t: VR10V 1.00E+08 10000 IFSM: VR=60% VRRM 1.00E+07 , ­ Total recovered charge, Qrr 10000 W4693QR050-080 AD Issue 1 Tj = 180°C 4000A 2000A 1000A 500A
IXYS
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IXYS DSA 1-16D DIODE DSA 1-16D DO-205ACDO-30 1718a 110-12F diode avalanche DSA VRRM 2300 D5-10 D5-14 D5-16 D5-18 D5-20 D5-11

TO200AB

Abstract: phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 180°C Tj initial , , which is limited to that plotted. 25°C Coefficients A B 180°C Coefficients 0.8298867 A , 10000 0.1 W4693QK050-080 AD Issue 1 KSC ASC W4693QK050-080 AD Issue 1 180°C 25 , ) Figure 3 ­ Maximum Surge Rating Tj (initial) = 180°C 1.00E+08 I2t: VR10V 2 I2t: VR , W4693QK050-080 AD Issue 1 Tj = 180°C 4000A 2000A 1000A 500A 4000A 2000A 1000A 500A Recovered
AEGIS Semiconductores
Original
TO200AB

W4693QR

Abstract: W4693QR080 =60°C 1.2 Square wave =120°C Sine wave =180°C 1.0 Square wave =180°C DC 0.8 0.6 PR , VR 1.6 1.4 1.2 =180°C 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 IO 0.6 0.8 , (V) 3.0 2.8 2.2 VR=30V Sine wave =180°C 1.8 Square wave =180°C 1.6 Square , =180°C 1.4 Square wave =180°C 1.2 Square wave =120°C Square wave =60°C 1.0 0.8 0.6
Westcode Semiconductors
Original
W4693QR

W4693QK

Abstract: W4693QK050 =120°C 1.8 Sine wave =180°C Square wave =180°C DC 1.6 1.4 1.2 1.0 0.8 VR 8 , 2.8 2.8 Sine wave =180°C 2.4 Square wave =180°C 2.2 Square wave =120°C 2.0 , 2.6 2.4 2.2 2.0 1.8 1.6 DC Sine wave =180°C 1.4 Io 0.8 0.6 1.2 Square wave =180°C 1.0 Square wave =120°C 0.8 1.2 1.0 Io 40 VR Reverse Voltage (V) Square
Westcode Semiconductors
Original
W4693QK050 W4693QK W4693QK080
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